1 C2M0045170P silicon carbide power mosfet c2 m tm mosfet technology n-channel enhancement mode features ? optimized package with separate driver source pin ? 8mm of creepage distance between drain and source ? high blocking voltage with low on-resistance ? high speed switching with low capacitances ? easy to parallel and simple to drive ? halogen free, rohs compliant benefts ? reduce switching losses and minimize gate ringing ? higher system effciency ? reduce cooling requirements ? increase power density ? increase system switching frequency applications ? 1500v solar inverters ? switch mode power supplies ? high voltage dc/dc converters ? pulsed power applications package v ds 1700 v i d @ 25?c 72 a r ds(on) 45 m ? maximum ratings (t c = 25 ?c unless otherwise specifed) symbol parameter value unit test conditions note v dsmax drain - source voltage 1700 v v gs = 0 v, i d = 100 a v gsmax gate - source voltage (dynamic) -10/+25 v ac (f >1 hz) note: 1 v gsop gate - source voltage (static) -5/+20 v static note: 2 i d continuous drain current 72 a v gs =20 v, t c = 25?c fig. 19 48 v gs =20 v, t c = 100?c i d(pulse) pulsed drain current 160 a pulse width t p limited by t jmax fig. 22 p d power dissipation 520 w t c =25?c, t j = 150 ?c fig. 20 t j , t stg operating junction and storage temperature -40 to +150 ?c t l solder temperature 260 ?c 1.6mm (0.063) from case for 10s note (1): when using mosfet body diode v gsmax = -5v/+25v note (2): mosfet can also safely operate at 0/+20v part number package marking C2M0045170P to-247-4 plus C2M0045170P drain (pin 1, tab) power source (pin 2) driver source (pin 3) gate (pin 4) 1 d tab drain 2 3 4 s s g C2M0045170P rev. -, 04-2018
2 electrical characteristics (t c = 25?c unless otherwise specifed) symbol parameter min. typ. max. unit test conditions note v (br)dss drain-source breakdown voltage 1700 v v gs = 0 v, i d = 100 a v gs(th) gate threshold voltage 2.0 2.6 4 v v ds = v gs , i d = 18ma fig. 11 1.8 v v ds = v gs , i d = 18ma, t j = 150 c i dss zero gate voltage drain current 2 100 a v ds = 1700 v, v gs = 0 v i gss gate-source leakage current 600 na v gs = 20 v, v ds = 0 v r ds(on) drain-source on-state resistance 45 59 m? v gs = 20 v, i d = 50 a fig. 4,5,6 90 v gs = 20 v, i d = 50 a, t j = 150 c g fs transconductance 21.7 s v ds = 20 v, i ds = 50 a fig. 7 24.4 v ds = 20 v, i ds = 50 a, t j = 150 c c iss input capacitance 3672 pf v gs = 0 v v ds = 1000 v f = 1 mhz v ac = 25 mv fig. 17,18 c oss output capacitance 171 c rss reverse transfer capacitance 6.7 e oss c oss stored energy 105 j fig 16 e on turn-on switching energy (sic diode fwd) 0.67 mj v ds = 1200 v, v gs = -5/20 v, i d = 50a, r g(ext) = 2.5?, l= 105 h, t j = 150 c, using sic diode as fwd fig. 26, 29b e off turn off switching energy (sic diode fwd) 0.31 e on turn-on switching energy (body diode fwd) 2.8 mj v ds = 1200 v, v gs = -5/20 v, i d = 50a, r g(ext) = 2.5?, l= 105 h, t j = 150 c, using mosfet as fwd fig. 26, 29a e off turn off switching energy (body diode fwd) 0.35 t d(on) turn-on delay time 35 ns v dd = 1200 v, v gs = -5/20 v i d = 50 a, r g(ext) = 2.5 ?, timing relative to v ds inductive load fig. 27, 29 t r rise time 13 t d(off) turn-off delay time 46 t f fall time 10 r g(int) internal gate resistance 1.3 ? f = 1 mhz , v ac = 25 mv q gs gate to source charge 44 nc v ds = 1200 v, v gs = -5/20 v i d = 50 a per iec60747-8-4 pg 21 fig. 12 q gd gate to drain charge 57 q g total gate charge 188 reverse diode characteristics symbol parameter typ. max. unit test conditions note v sd diode forward voltage 4.1 v v gs = - 5 v, i sd = 25 a fig. 8, 9, 10 note 1 3.6 v v gs = - 5 v, i sd = 25 a, t j = 150 c i s continuous diode forward current 72 a t c = 25 c, v gs = - 5 v note 1 t rr reverse recovery time 44 ns v gs = - 5 v, i sd = 50 a , v r = 1200 v dif/dt = 3000 a/s note 1 q rr reverse recovery charge 2 c i rrm peak reverse recovery current 60 a note (1): when using sic body diode the maximum recommended v gs = -5v thermal characteristics symbol parameter typ. max. unit test conditions note r jc thermal resistance from junction to case 0.22 0.24 c/w fig. 21 r jc thermal resistance from junction to ambient 40 C2M0045170P rev. -, 04-2018
3 0 25 50 75 100 125 150 0.0 2.5 5.0 7.5 10.0 12.5 15.0 17.5 20.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 150 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 25 50 75 100 125 150 0.0 2.5 5.0 7.5 10.0 12.5 15.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = - 40 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v 0 25 50 75 100 125 150 0.0 2.5 5.0 7.5 10.0 12.5 15.0 drain - source current, i ds (a) drain - source voltage, v ds (v) conditions: t j = 25 c tp < 200 s v gs = 20 v v gs = 10 v v gs = 18 v v gs = 16 v v gs = 14 v v gs = 12 v figure 2. output characteristics t j = 25 c typical performance figure 1. output characteristics t j = -40 c 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 on resistance, r ds on (mohms) drain - source current, i ds (a) conditions: v gs = 20 v t p < 200 s t j = 150 c t j = - 40 c t j = 25 c 0 20 40 60 80 100 120 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (mohms) junction temperature, t j ( c) conditions: i ds = 50 a t p < 200 s v gs = 20 v v gs = 18 v v gs = 16 v v gs = 14 v figure 3. output characteristics t j = 150 c figure 4. normalized on-resistance vs. temperature figure 6. on-resistance vs. temperature for various gate voltage figure 5. on-resistance vs. drain current for various temperatures 0.0 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 on resistance, r ds on (p.u.) junction temperature, t j ( c) conditions: i ds = 50 a v gs = 20 v t p < 200 s C2M0045170P rev. -, 04-2018
4 typical performance 0 25 50 75 100 125 0 2 4 6 8 10 12 14 drain - source current, i ds (a) gate - source voltage, v gs (v) conditions: v ds = 20 v tp < 200 s t j = 150 c t j = - 40 c t j = 25 c - 150 - 120 - 90 - 60 - 30 0 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = - 40 c t p < 200 s v gs = - 2 v v gs = - 5 v v gs = 0 v - 150 - 120 - 90 - 60 - 30 0 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 25 c t p < 200 s v gs = - 2 v v gs = - 5 v v gs = 0 v - 150 - 120 - 90 - 60 - 30 0 - 7 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 150 c t p < 200 s v gs = - 2 v v gs = - 5 v v gs = 0 v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 - 50 - 25 0 25 50 75 100 125 150 threshold voltage, v th (v) junction temperature t j ( c) conditons v gs =v ds i ds = 18 ma - 5 0 5 10 15 20 25 0 20 40 60 80 100 120 140 160 180 200 gate - source voltage, v gs (v) gate charge, q g (nc) conditions: i ds = 50 a i gs = 100 ma v ds = 1200 v t j = 25 c figure 7. transfer characteristic for various junction temperatures figure 8. body diode characteristic at -40 oc figure 9. body diode characteristic at 25 oc figure 10. body diode characteristic at 150 oc figure 11. threshold voltage vs. temperature figure 12. gate charge characteristic C2M0045170P rev. -, 04-2018
5 1 10 100 1000 10000 0 50 100 150 200 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss typical performance - 150 - 120 - 90 - 60 - 30 0 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = - 40 c t p < 200 s v gs = 10 v v gs = 5 v v gs = 20 v v gs = 15 v v gs = 0 v - 150 - 120 - 90 - 60 - 30 0 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 25 c t p < 200 s v gs = 10 v v gs = 5 v v gs = 20 v v gs = 15 v v gs = 0 v - 150 - 120 - 90 - 60 - 30 0 - 6 - 5 - 4 - 3 - 2 - 1 0 drain - source current, i ds (a) drain - source voltage v ds (v) conditions: t j = 150 c t p < 200 s v gs = 10 v v gs = 5 v v gs = 20 v v gs = 15 v v gs = 0 v 0 20 40 60 80 100 120 0 200 400 600 800 1000 1200 stored energy, e oss (j) drain to source voltage, v ds (v) 1 10 100 1000 10000 0 200 400 600 800 1000 capacitance (pf) drain - source voltage, v ds (v) c iss c oss conditions: t j = 25 c v ac = 25 mv f = 1 mhz c rss figure 13. 3rd quadrant characteristic at -40 oc figure 14. 3rd quadrant characteristic at 25 oc figure 15. 3rd quadrant characteristic at 150 oc figure 16. output capacitor stored energy figure 17. capacitances vs. drain-source voltage (0-200 v) figure 18. capacitances vs. drain-source voltage (0-1000 v) C2M0045170P rev. -, 04-2018
6 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 10 20 30 40 50 60 70 80 90 switching loss (mj) drain to source current, i ds (a) e off e on e total conditions: t j = 25 c v dd = 900 v r g(ext) = 2.5 ? v gs = - 5v/+20 v fwd = C2M0045170P l = 130 h typical performance 0 10 20 30 40 50 60 70 80 - 55 - 30 - 5 20 45 70 95 120 145 drain - source continous current, i ds (dc) (a) case temperature, t c ( c) conditions: t j 150 c 0 100 200 300 400 500 600 - 55 - 30 - 5 20 45 70 95 120 145 maximum dissipated power, p tot (w) case temperature, t c ( c) conditions: t j 150 c 1e - 3 10e - 3 100e - 3 1e - 6 10e - 6 100e - 6 1e - 3 10e - 3 100e - 3 1 junction to case impedance, z thjc ( o c/w) time, t p (s) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 0.01 0.10 1.00 10.00 100.00 0.1 1 10 100 1000 drain - source current, i ds (a) drain - source voltage, v ds (v) 100 s 1 ms 10 s conditions: t c = 25 c d = 0, parameter: t p 100 ms limited by r ds on 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 70 80 90 switching loss (mj) drain to source current, i ds (a) e off e on e total conditions: t j = 25 c v dd = 1200 v r g(ext) = 2.5 ? v gs = - 5v/+20 v fwd = C2M0045170P l = 130 h figure 20. maximum power dissipation derating vs. case temperature figure 19. continuous drain current derating vs. case temperature figure 21. transient thermal impedance (junction - case) figure 22. safe operating area figure 23. clamped inductive switching energy vs. drain current (v dd = 900v) figure 24. clamped inductive switching energy vs. drain current (v dd = 1200v) C2M0045170P rev. -, 04-2018
7 typical performance 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0 5 10 15 20 25 switching loss (mj) external gate resistor rg(ext) (ohms) e off e on e total conditions: t j = 25 c v dd = 1200 v i ds = 50 a v gs = - 5v/+20 v fwd = C2M0045170P l = 130 h 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 25 50 75 100 125 150 175 switching loss (mj) junction temperature, t j ( c) e off e on e total conditions: i ds = 20 a v dd = 1200 v r g(ext) = 2.5 ? v gs = - 5v/+20 v fwd = C2M0045170P ( - - - )fwd = c3d25170h l = 130 h e on e total e off 0 25 50 75 100 125 150 0 5 10 15 20 25 switching times (ns) external gate resistor rg(ext) (ohms) t d(off) conditions: t j = 25 c v dd = 1200 v i ds = 50 a v gs = - 5v/+20 v fwd = C2M0045170P l = 130 h t r t f t d(on) figure 25. clamped inductive switching energy vs. r g(ext) figure 26. clamped inductive switching energy vs. temperature figure 27. switching times vs. r g(ext) figure 28. switching times defnition C2M0045170P rev. -, 04-2018
8 test circuit schematic q 2 q 1 v gs = - 5v r g r g C2M0045170P d.u.t figure 29a. clamped inductive switching test circuit using mosfet intristic body diode d 1 c3d25170h 25a, 1700v sic schottky d.u.t C2M0045170P q 2 v dc r g figure 29b. clamped inductive switching test circuit using sic schottky diode C2M0045170P rev. -, 04-2018
9 package dimensions package to-247-4l plus base metal section "f-f", "g-g" and "h-h" scale: none e2 e e3 e4 e1 title: sheet company ase weihai 1 of 3 ase advanced semiconductor engineering weihai , inc. package outline issue date dwg no. to-247 plus 4 ld 98w0004to005 may.20, 2016 a note ; 1. all metal surfaces: tin plated,except area of cut 2. dimensioning & toleranceing confirm to asme y14.5m-1994. 3. all dimensions are in millimeters. angles are in degrees. min millimeters sym max a a1 a2 b' b b1 b2 b3 b4 c' c d d1 d2 e e1 e2 e3 e4 e n l l1 q t w x 4.83 5.21 2.29 2.54 1.91 2.16 1.07 1.28 1.07 1.33 2.39 2.94 2.39 2.84 1.07 1.60 1.07 1.50 0.55 0.65 0.55 0.68 23.30 23.60 16.25 17.65 0.95 1.25 15.75 16.13 13.10 14.15 3.68 5.10 1.00 1.90 12.38 13.43 2.54 bsc 4 17.31 17.82 3.97 4.37 5.49 6.00 17.5 ref. 3.5 ref. 4 ref. e1 5.08 bsc 2.69 2.39 b5 b6 2.39 2.64 l2 2.35 2.65 title: sheet company ase weihai 2 of 3 ase advanced semiconductor engineering weihai , inc. package outline issue date dwg no. to-247 plus 4ld 98w0004to005 a may.20, 2016 C2M0045170P rev. -, 04-2018
10 10 related links ? c2m pspice models: http://wolfspeed.com/power/tools-and-support ? sic mosfet isolated gate driver reference design: http://wolfspeed.com/power/tools-and-support ? sic mosfet evaluation board: http://wolfspeed.com/power/tools-and-support C2M0045170P rev. -, 04-2018 copyright ? 2018 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemical agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree represen - tative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffc control systems. notes
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